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Proceedings Paper

Novel process for phase-shifting mask fabrication
Author(s): Haruhiko Kusunose; Satoshi Aoyama; Kunihiro Hosono; Susumu Takeuchi; Shuichi Matsuda; Maaike Op de Beeck; Nobuyuki Yoshioka; Yaichiro Watakabe
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Paper Abstract

In this new process for phase-shifting mask fabrication, molybdenum silicide (MoSi) is used as an optical shield layer and spin-on glass (SOG) as a phase-shifter layer. Chromium is employed as an etch-stopper during SOG etching. Cr etch-stopper will be removed at the end of tiie process, therefore all optical problems related to an etch-stopper are avoided. This Cr etch-stopper is also useful in inspection and repair of shifter remaining defects. At first, we will describe the fabrication process including the shifter-defect inspection and repair. Secondary, we will discuss the phase-shifting mask accuracy and its influence to the printed resist pattern when using the alternating type phase-shifting mask. Lastly,we will mention the application result of development of lithography for 64Mbit DRAM using this process.

Paper Details

Date Published: 1 June 1992
PDF: 11 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130323
Show Author Affiliations
Haruhiko Kusunose, Mitsubishi Electric Corp. (Japan)
Satoshi Aoyama, Mitsubishi Electric Corp. (Japan)
Kunihiro Hosono, Mitsubishi Electric Corp. (Japan)
Susumu Takeuchi, Mitsubishi Electric Corp. (Japan)
Shuichi Matsuda, Mitsubishi Electric Corp. (Japan)
Maaike Op de Beeck, Mitsubishi Electric Corp. (Japan)
Nobuyuki Yoshioka, Mitsubishi Electric Corp. (Japan)
Yaichiro Watakabe, Mitsubishi Electric Corp. (Japan)


Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)

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