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Proceedings Paper

Advanced i-line resist performance with and without phase-shift masks
Author(s): Nicholas K. Eib; Eytan Barouch; Uwe Hollerbach; Steven A. Orszag
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Paper Abstract

We propose in this paper a new imaging technology for the 64M DRAM, named "CQUEST” (Canon QUadrupole Effect for Stepper Technology). CQUEST is derived from the mathematical analysis of the partial coherence theory1. It can provide almost the same effects with conventional masks as those that result using phase shift masks. Therefore, it is a promising candidate for next generation lithography. Simulation and some experimental results will be shown to substantiate the above. As shown in the results, the 64M DRAM process can be achieved with the existing i-line technology.

Paper Details

Date Published: 1 June 1992
PDF: 24 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130313
Show Author Affiliations
Nicholas K. Eib, IBM/East Fishkill Facility (United States)
Eytan Barouch, Princeton Univ. (United States)
Uwe Hollerbach, Princeton Univ. (United States)
Steven A. Orszag, Princeton Univ. (United States)


Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)

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