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Proceedings Paper

Computer-aided design tool for phase-shifting masks
Author(s): David M. Newmark; Andrew R. Neureuther; Anton K. Pfau
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Paper Abstract

A computer aided design tool, MASC (Mask Analysis System by Computer), has been developed to automatically generate design graphs of user specified image quality measurements, for instance, intensity slope around a feature edge or the critical dimension formed by intersecting images of two mask layers, as a function of both optical system and mask layout variables. It is intended to assist layout designers in determining the printability of a particular mask level or combination of mask levels which form a given device. MASC is applied to a DRAM layout to illustrate these capabilities. A misalignment analysis of the poly layer with respect to the trench layer demonstrates that the lin- ewidth extracted from the 0.3 intensity contour is less sensitive to misalignment than would be predicted from the overlap of the mask geometries themselves. The resizing of poly bit lines in a DRAM cell is examined to show that focus latitude and depth of focus are not adversely affected by bloating. SEMs support this prediction. Finally, the lin- ewidth control of a DRAM layout is improved by bloating a noncritical line by 0.25 ?/NA and adding a phase-shifted non-printing band located 0.3 ?/NA from the critical line

Paper Details

Date Published: 1 June 1992
PDF: 12 pages
Proc. SPIE 1674, Optical/Laser Microlithography V, (1 June 1992); doi: 10.1117/12.130307
Show Author Affiliations
David M. Newmark, Univ. of California/Berkeley (United States)
Andrew R. Neureuther, Univ. of California/Berkeley (United States)
Anton K. Pfau, Univ. of California/Berkeley (United States)


Published in SPIE Proceedings Vol. 1674:
Optical/Laser Microlithography V
John D. Cuthbert, Editor(s)

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