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Proceedings Paper

Uncooled silicon carbide sensor producing optical signal
Author(s): Geunsik Lim; Tariq Manzur; Aravinda Kar
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Paper Abstract

A novel approach will be discussed to design and fabricate sensors for a wide variety of wavelengths by selecting appropriate acceptor levels in a semiconductor material. An n-type 4H-SiC substrate has been doped with gallium using a laser doping method for sensing the MWIR wavelength of 4.21 mm. The incident MWIR photons change the electron densities in the valence band and the acceptor energy levels, modifying the reflectivity of the sensor. This change in the reflectivity is determined with a He-Ne laser as an optical signal and the sensor can be operated at room temperature. The effect of the photon collection optics on the sensor response has been studied. Also the dopant concentration has been found to affect the optical signal.

Paper Details

Date Published: 21 June 2012
PDF: 8 pages
Proc. SPIE 8359, Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense XI, 83591A (21 June 2012); doi: 10.1117/12.1000118
Show Author Affiliations
Geunsik Lim, The College of Optics and Photonics, Univ. of Central Florida (United States)
Tariq Manzur, Naval Undersea Warfare Ctr. (United States)
Aravinda Kar, The College of Optics and Photonics, Univ. of Central Florida (United States)


Published in SPIE Proceedings Vol. 8359:
Sensors, and Command, Control, Communications, and Intelligence (C3I) Technologies for Homeland Security and Homeland Defense XI
Edward M. Carapezza, Editor(s)

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