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Proceedings Paper

Alignment strategy for mixed e-beam and optical lithography
Author(s): Paul Duval; Kamal Tabatabaie-Alavi; Dale Shaw; Alan St. Germain
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Paper Abstract

Although maskless electron beam lithography is viewed as an alternative lithographic technology by the mainstream semiconductor industry, it has long been a key lithographic tool of the compound semiconductor devices. It combines very high resolution with a high depth of field, but its wide acceptance in semiconductor production has been hindered by lower throughput when compared to optical lithography. Several new approaches to parallel e-beam lithography are currently being developed. These technologies, however, have not yet demonstrated the throughput per dollar invested that the current optical tools achieve. Given the cost and high throughput requirements set by most semiconductor manufacturers, the new parallel e-beam lithography tools are likely to be used for processing only a few critical layers, similar to the way the older electron beam tools are used by compound semiconductor manufacturers. Overlay accuracy is another big challenge when mixing optical and E-beam lithography tools. An alignment mark strategy is needed which will results in optimum registration accuracy between E-beam and optically defined layers on the chip.

Paper Details

Date Published: 26 March 2013
PDF: 10 pages
Proc. SPIE 8680, Alternative Lithographic Technologies V, 868021 (26 March 2013); doi: 10.1117/12.1000095
Show Author Affiliations
Paul Duval, Raytheon RF Components Co. (United States)
Kamal Tabatabaie-Alavi, Raytheon RF Components Co. (United States)
Dale Shaw, Raytheon RF Components Co. (United States)
Alan St. Germain, Raytheon RF Components Co. (United States)


Published in SPIE Proceedings Vol. 8680:
Alternative Lithographic Technologies V
William M. Tong, Editor(s)

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