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Optical Engineering

Understanding Focus Effects In Submicrometer Optical Lithography
Author(s): Chris A. Mack
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Paper Abstract

Abstract. A new approach for characterizing resolution and depth of focus (DOF) in optical microlithography is introduced. By examination of the interaction of the aerial image with the photoresist process, a metric of image quality is defined. The variation of this metric with feature size and defocus can be used to measure the resolution and DOF. The effects of various imaging parameters on DOF can then be determined. To further study focus effects in submicrometer imaging, the lithography simulation program PROLITH (the positive resist optical lithography model) is modified to account for defocus within the photoresist film.

Paper Details

Date Published: 1 December 1988
PDF: 8 pages
Opt. Eng. 27(12) doi: 10.1117/12.7978683
Published in: Optical Engineering Volume 27, Issue 12
Show Author Affiliations
Chris A. Mack, National Security Agency (United States)


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