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Optical Engineering

1/F Optimization For A Complementary Metal Oxide Semiconductor Focal Plane Array Input Circuit
Author(s): Robert James Martin; William R. Herzog
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Paper Abstract

In electro-optical detector systems, the noise characteristics of transresistance amplifiers are sensitive to the incremental conductivity of the photovoltaic detector. In this paper we show that the 1/f noise corner frequency contributed to the noise by the amplifier is a function of the bias applied to the detector. The 1/f noise corner frequency of the diode in cooled focal plane arrays is also a function of the reverse bias, but there is an optimum reverse bias that is not 0 V. This fact becomes important when it is necessary to use complementary metal oxide semiconductor amplifiers that have lame 1/f noise corner frequencies.

Paper Details

Date Published: 1 March 1988
PDF: 4 pages
Opt. Eng. 27(3) doi: 10.1117/12.7977922
Published in: Optical Engineering Volume 27, Issue 3
Show Author Affiliations
Robert James Martin, University of Central Florida (United States)
William R. Herzog, Martin Marietta Orlando Aerospace (United States)


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