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Optical Engineering

Picosecond Photoluminescence Spectroscopy In Highly Excited Semiconductors
Author(s): S. Charbonneau
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Paper Abstract

Time-resolved photoluminescence is universally regarded as a very useful probe in the investigation of the dynamic behavior of high density electron-hole systems in direct-gap semiconductors, in which carrier lifetimes are of the order of nanoseconds or less. Two applications of this technique include (1) the observation of excitons in which a conduction electron and a valence hole are bound to one another via the long-range Coulomb interaction and (2) the formation of excitonic molecules (or biexcitons), which is caused by the attractive covalent bonding between two single excitons. This paper reviews transient photoluminescence techniques used recently in the study of such highly excited systems. Interaction between excitons at high concentration is discussed, and some experimental results for ZnSe and GaAs are presented.

Paper Details

Date Published: 1 October 1989
PDF: 7 pages
Opt. Eng. 28(10) 281101 doi: 10.1117/12.7977094
Published in: Optical Engineering Volume 28, Issue 10
Show Author Affiliations
S. Charbonneau, National Research Council Canada (Canada)

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