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Optical Engineering

Ultrafast Electronic And Structural Processes In Highly Excited Crystalline And Noncrystalline Silicon
Author(s): P. M. Fauchet
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Paper Abstract

The carrier dynamics of highly excited (N > 1020 cm-3) crystal-line and amorphous silicon have been studied by picosecond and femto-second pump and probe measurements. The Auger coefficient, trapping time, and other parameters relevant for transport have been obtained. At still higher excitation, melting occurs. The optical constants of liquid Si have been measured, and evidence for superheating of the liquid phase above the boiling temperature is presented.

Paper Details

Date Published: 1 October 1989
PDF: 5 pages
Opt. Eng. 28(10) 281096 doi: 10.1117/12.7977093
Published in: Optical Engineering Volume 28, Issue 10
Show Author Affiliations
P. M. Fauchet, Princeton University (United States)


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