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Optical Engineering

Time-Resolved Raman Scattering In Group III-V And Group IV Semiconductors
Author(s): Jeff F. Young
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Paper Abstract

Some applications of picosecond, time-resolved Raman scattering in the field of nonequilibrium semiconductor physics are reviewed. A brief, nonexhaustive survey of progress in this field over the past 10 years serves to introduce the general experimental techniques and to indicate the range of physical phenomena that have been studied. More detailed coverage of work on nonequilibrium coupled plasmon-LO phonon modes in InP and GaAs and of optical phonon dynamics in Ge and GeSi alloys is given. Emphasis is placed on comparing the use of picosecond Raman scattering to study nonequilibrium phenomena in group IV and group III-V semiconductors.

Paper Details

Date Published: 1 October 1989
PDF: 10 pages
Opt. Eng. 28(10) 281075 doi: 10.1117/12.7977091
Published in: Optical Engineering Volume 28, Issue 10
Show Author Affiliations
Jeff F. Young, National Research Council Canada (Canada)


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