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Optical Engineering

256 X 256 Element Platinum Silicide Schottky-Barrier Infrared Charge-Coupled Device Image Sensor
Author(s): Masafumi Kimata; Masahiko Denda; Naoki Yutani; Shyuhei Iwade; Natsuro Tsubouchi; Michio Daido; Hiroyuki Furukawa; Reikichi Tsunoda; Toshio Kanno
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Paper Abstract

A 256 x 256 element PtSi Schottky-barrier 1R-CCD image sensor has been developed using a minimum design rule of 2 µm and a three-level polysilicon structure. The pixel size and chip size are 37 x 31 µm2 and 10 x 10 mm2, respectively. In spite of the small pixel size, a large fill factor of 25% has been obtained. The responsivity has been improved by use of a thin metal film and an optical cavity structure. The barrier height and quantum efficiency coefficient obtained from the array performance measurement are 0.23 eV and 0.15 eV -1, respectively. The noise equivalent temperature difference of about 0.1 K is obtained with f/1.4 optics and a 16.7 ms stare time. The noise in this case is limited by the shot noise of the detector. An infrared camera was also developed using the 256 x 256 element IR-CCD image sensor.

Paper Details

Date Published: 1 March 1987
PDF: 7 pages
Opt. Eng. 26(3) 263209 doi: 10.1117/12.7974052
Published in: Optical Engineering Volume 26, Issue 3
Show Author Affiliations
Masafumi Kimata, Mitsubishi Electric Corporation (Japan)
Masahiko Denda, Mitsubishi Electric Corporation (Japan)
Naoki Yutani, Mitsubishi Electric Corporation (Japan)
Shyuhei Iwade, Mitsubishi Electric Corporation (Japan)
Natsuro Tsubouchi, Mitsubishi Electric Corporation (Japan)
Michio Daido, Mitsubishi Electric Corporation (Japan)
Hiroyuki Furukawa, Mitsubishi Electric Corporation (Japan)
Reikichi Tsunoda, Japan Defence Agency (Japan)
Toshio Kanno, Japan Defence Agency (Japan)

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