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Optical Engineering

Ionized Clusters: A Technique For Low Energy Ion Beam Deposition
Author(s): I. Yamada; T. Takagi; P. R. Younger; J. Blake
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Paper Abstract

Ionized cluster beams (ICBs) are widely used to deposit metal, semi-conductor, and insulating films. This paper describes the current state of this technology in both fundamental and applications areas. One important ambi-guity in the theory of metal cluster formation is addressed. Rutherford back-scattering is used to measure the extent of any displacement of surface atoms caused by ICBs. The minimal amount of such surface damage is confirmed by the close-to-ideal values measured for Schottky barrier height on an Al/Si interface. Several examples of ICBs are described.

Paper Details

Date Published: 1 February 1987
PDF: -173 pages
Opt. Eng. 26(2) doi: 10.1117/12.7974045
Published in: Optical Engineering Volume 26, Issue 2
Show Author Affiliations
I. Yamada, Kyoto University (Japan)
T. Takagi, Kyoto University (Japan)
P. R. Younger, Eaton Corporation (United States)
J. Blake, Eaton Corporation (United States)


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