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Optical Engineering

Deep-Level Transient Spectroscopy: Characterization And Identification Of Electronic Defects
Author(s): N. M. Johnson
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Paper Abstract

This paper presents an overview of the application of deep-level transient spectroscopy (DLTS) for characterizing and identifying electronic defects in semiconductors. After a review of general principles, the range of defect problems that has been studied by DLTS is illustrated with results from crystalline semiconductors, semiconductor-insulator interfaces, and amorphous semiconductors.

Paper Details

Date Published: 1 May 1986
PDF: 7 pages
Opt. Eng. 25(5) 255698 doi: 10.1117/12.7973888
Published in: Optical Engineering Volume 25, Issue 5
Show Author Affiliations
N. M. Johnson, Xerox Palo Alto Research Center (United States)

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