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Optical Engineering

Ten Micrometer Infrared Light Emitting Diodes For Radiometric Sources
Author(s): K. J. Linden; S. T. Palmacci
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Paper Abstract

Long wavelength infrared light-emitting diodes have been fabricated from the ternary Pb-chalcogenide material Pb1-xSn,Se with composition x = 3.2%. As captured in an f/2 aperture optical system, these devices emitted approximately 25 nW of 11 Am power with a bandwidth of 0.2 um between half-power points. The line center shifted from 11.6 um at 16 K to 10.4 Am at 50 K, in agreement with results previously obtained from laser emission data. Such devices are useful as radiometric calibration sources for low background infrared detection systems.

Paper Details

Date Published: 1 August 1985
PDF: 2 pages
Opt. Eng. 24(4) 244719 doi: 10.1117/12.7973560
Published in: Optical Engineering Volume 24, Issue 4
Show Author Affiliations
K. J. Linden, Spectra-Physics (United States)
S. T. Palmacci, Spectra-Physics (United States)


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