Share Email Print

Optical Engineering

Infrared All-Optical Information Processing In Semiconductors
Author(s): E. Garmire
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

This paper discusses the feasibility of all-optical information processing using the nonlinear refractive index at the band gap in direct band semiconductors. Comparison is made of the nonlinearities due to dynamic state filling, also known as the dynamic Burstein-Moss shift, and excitonic nonlinearities. It will be shown that the lowest possible intensity thresholds for nonlinear processes such as optical bistability and degenerate four-wave mixing occur from the dynamic state filling nonlinearity. The wavelengths around 3 µm in mate-rials such as InAs appear to be an excellent choice for parallel processing of a large amount of information.

Paper Details

Date Published: 1 August 1985
PDF: 4 pages
Opt. Eng. 24(4) doi: 10.1117/12.7973532
Published in: Optical Engineering Volume 24, Issue 4
Show Author Affiliations
E. Garmire, University of Southern California (United States)

© SPIE. Terms of Use
Back to Top