Share Email Print

Optical Engineering

Ion Implanted Optical Waveguides In Gallium Arsenide
Author(s): M. A. Mentzer; R. G. Hunsperger; S. Sriram; J. Bartko; M. S. Wlodawski; J. M. Zavada; H. A. Jenkinson
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Integrated optical circuits operating at infrared wavelengths and fabricated monolithically on a GaAs substrate will have a tremendous impact on signal processing systems. These circuits will afford the ultimate merger of VLSI electronics and microwave devices with integrated GaAs optoelectronics. Such GaAs components include planar and channel waveguides, parallel-channel directional couplers, electro-optic modulators and switches, laser diodes, acousto-optic modulators, and detectors. The focus of this paper is the design and fabrication by ion implantation of the necessary fundamental build-ing blocks of optical integrated circuit planar waveguides. Design considerations include the compensation mechanism in doped GaAs substrates and the implantation processing parameters utilized in achieving optimum optical and electrical device characteristics.

Paper Details

Date Published: 1 April 1985
PDF: 5 pages
Opt. Eng. 24(2) 241222 doi: 10.1117/12.7973459
Published in: Optical Engineering Volume 24, Issue 2
Show Author Affiliations
M. A. Mentzer, International Signal and Control Defense Systems (United States)
R. G. Hunsperger, University of Delaware (United States)
S. Sriram, Westinghouse Electric Corporation (United States)
J. Bartko, Westinghouse Electric Corporation (United States)
M. S. Wlodawski, Westinghouse Electric Corporation (United States)
J. M. Zavada, U.S. Army Research and Development Center (United States)
H. A. Jenkinson, U.S. Army Research and Development Center (United States)

© SPIE. Terms of Use
Back to Top