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Optical Engineering

Properties of AlxGal-xAs/GaAs Multiple Quantum Well Laser Structures Grown By Molecular Beam Epitaxy
Author(s): R. Fischer; J. Klem; H. Morkoc; Y. L. Sun; M. V Klein
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Paper Abstract

Multiple quantum well AI,Ga1-xAs/GaAs structures grown by molecular beam epitaxy were studied in order to determine the growth conditions that optimize luminescent response. Low temperature photolumines-cence results indicate that a growth temperature of 700°C is optimum. The quality of the interfaces between the AlxGa1-xAs and GaAs layers was assessed by means of modulation doped structures. It was found that the interfacial quality is optimized at a growth temperature of 700°C. Finally, room temperature continuous wave photopumped laser operation at a wavelength of A= 7270 A is demonstrated in these structures.

Paper Details

Date Published: 1 June 1984
PDF: -322 pages
Opt. Eng. 23(3) doi: 10.1117/12.7973287
Published in: Optical Engineering Volume 23, Issue 3
Show Author Affiliations
R. Fischer, University of Illinois (United States)
J. Klem, University of Illinois (United States)
H. Morkoc, University of Illinois (United States)
Y. L. Sun, University of Illinois (United States)
M. V Klein, University of Illinois (United States)


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