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Optical Engineering

800 X 800 Charge-Coupled Device Image Sensor
Author(s): Morley M. Blouke; James R. Janesick; Joseph E. Hall; Marvin W. Cowens; Patrick J. May
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Paper Abstract

The design and performance of an 800 X 800 pixel charge-coupled device (CCD) imager are described. This device is fabricated utilizing a three-phase, three-level polysilicon gate process. The chip is thinned to 8 um and is employed in the rear illumination mode. Detailed measurements of the device performance, including dark current as a function of temperature, linearity, and noise, are presented. The device is coated with an ultraviolet (UV) downconverting phosphor which allows imaging with the same device over an extremely wide optical bandwidth.

Paper Details

Date Published: 1 October 1983
PDF: 8 pages
Opt. Eng. 22(5) 225607 doi: 10.1117/12.7973205
Published in: Optical Engineering Volume 22, Issue 5
Show Author Affiliations
Morley M. Blouke, Texas Instruments Incorporated (United States)
James R. Janesick, Jet Propulsion Laboratory (United States)
Joseph E. Hall, Texas Instruments Incorporated (United States)
Marvin W. Cowens, Texas Instruments Incorporated (United States)
Patrick J. May, Texas Instruments Incorporated (United States)


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