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Optical Engineering

Resist Possibilities In Ion Beam Lithography
Author(s): A. Macrander; D. Barr; A. Wagner
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Paper Abstract

A broad range of materials and processing techniques amenable to producing resist systems for ion beam lithography are discussed. The effect of random fluctuations in exposure dose on feature size for a Gaussian beam of constant shape is calculated. The results of Monte Carlo simulations of exposures of PMMA on silicon by 50 keV H+,100 keV H2+, and 150 keV Li+ ions are presented, and it is shown that feature resolution is fundamentally limited by the physical processes through which energy is deposited.

Paper Details

Date Published: 1 April 1983
PDF: 5 pages
Opt. Eng. 22(2) doi: 10.1117/12.7973085
Published in: Optical Engineering Volume 22, Issue 2
Show Author Affiliations
A. Macrander, Bell Laboratories (United States)
D. Barr, Bell Laboratories (United States)
A. Wagner, Bell Laboratories (United States)


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