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Optical Engineering

Masked Ion Beam Lithography For Submicrometer Device Fabrication
Author(s): C. W. Slayman; J. L. Bartelt; C. M. McKenna; J. Y. Chen
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Paper Abstract

Masked ion beam lithography (MIBL) is a high resolution pattern replication technology that uses a collimated proton beam directed through a patterned mask to expose a resist-coated wafer in proximity to the mask. A major step in the demonstration of MIBL as a practical lithography for submicrometer device processing has been achieved with the fabrication of functional n-channel metal oxide semiconductor (NMOS) devices. We present details of the mask fabrication, resist and process technology development, and the resulting NMOS test chip characteristics.

Paper Details

Date Published: 1 April 1983
PDF: 7 pages
Opt. Eng. 22(2) 222208 doi: 10.1117/12.7973084
Published in: Optical Engineering Volume 22, Issue 2
Show Author Affiliations
C. W. Slayman, Hughes Research Laboratories (United States)
J. L. Bartelt, Hughes Research Laboratories (United States)
C. M. McKenna, Hughes Research Laboratories (United States)
J. Y. Chen, Hughes Research Laboratories (United States)

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