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Optical Engineering

Intralevel Hybrid Resist Process For The Fabrication Of Metal Oxide Semiconductor Devices With Submicron Gate Lengths
Author(s): J. N. Holbert; P. A. Seese; A. J. Gonzales; C. C. Walker
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Paper Details

Date Published: 1 April 1983
PDF: 5 pages
Opt. Eng. 22(2) doi: 10.1117/12.7973079
Published in: Optical Engineering Volume 22, Issue 2
Show Author Affiliations
J. N. Holbert, Motorola, Inc. (United States)
P. A. Seese, Motorola, Inc. (United States)
A. J. Gonzales, Motorola, Inc. (United States)
C. C. Walker, Motorola, Inc. (United States)

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