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Optical Engineering

Submicron Grating Fabrication On Gaas By Holographic Exposure
Author(s): D. Heflinger; J. Kirk; R. Cordero; G. Evans
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Paper Abstract

The laboratory techniques used for the fabrication of sub-micron gratings in GaAs are presented. A thin (~ 1250 A) film of Shipley AZ1450B photoresist on GaAs is exposed holographically with the use of the 4579 A line of an argon ion laser to produce gratings with a period of approximately 0.35 um. Data are presented that demonstrate the effects of variation of the following parameters: developer type, developer time, laser intensity, exposure time, photoresist thickness, and ion beam etching parameters. Grating efficiency measurements as a function of parameter variations indicate an optimum set of parameters for grating fabrication.

Paper Details

Date Published: 1 June 1982
PDF: 5 pages
Opt. Eng. 21(3) 213537 doi: 10.1117/12.7972942
Published in: Optical Engineering Volume 21, Issue 3
Show Author Affiliations
D. Heflinger, The Aerospace Corporation (United States)
J. Kirk, The Aerospace Corporation (United States)
R. Cordero, The Aerospace Corporation (United States)
G. Evans, The Aerospace Corporation (United States)

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