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Optical Engineering

Gaas Integrated Circuits And Charge-Coupled Devices For High Speed Signal Processing
Author(s): Richard C. Eden; Ira Deyhimy
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Paper Abstract

The superior electronic properties of GaAs, as compared with silicon, make possible the achievement of much higher performance levels in GaAs signal processing devices than have been demonstrated with silicon. Only recently, however, have advances in GaAs materials and processing technology made possible the fabrication of such devices as sub-100 ps propagation delay, high density planar GaAs in-tegrated circuits with large-scale integration (LSI) compatible power levels,1 and high transfer efficiency GaAs charge-coupled devices2 which should be capable of multi-gigahertz clocking rate operation. These high performance device technologies should have major impact on the high speed signal processing area, making possible, through their much higher speeds and lower power requirements, system approaches which could not be practically realized with existing silicon technology. In this paper the advantages of GaAs for high speed signal processing are reviewed and laboratory results obtained with high speed GaAs devices are reported.

Paper Details

Date Published: 1 December 1981
PDF: 6 pages
Opt. Eng. 20(6) doi: 10.1117/12.7972841
Published in: Optical Engineering Volume 20, Issue 6
Show Author Affiliations
Richard C. Eden, GigaBit Logic (United States)
Ira Deyhimy, Enhanced Energy Systems (United States)


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