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Optical Engineering

Detectors For The 1.1 To 1.6 µm Wavelength Region
Author(s): C. E. Hurwitz
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Paper Abstract

The current state of the art of photodetectors, both PIN and avalanche, for 1.1 to 1.6 um operation is reviewed. The devices are compared as components of optical receivers using several different types of amplifiers. GalnAsP/InP PIN and avalanche photodiode (APD) detectors are shown to be clearly superior to Ge devices with respect to dark current and other sources of noise. Receivers with performance within a few dB of the quantum limit appear to be possible with current technology.

Paper Details

Date Published: 1 August 1981
PDF: 7 pages
Opt. Eng. 20(4) 204658 doi: 10.1117/12.7972779
Published in: Optical Engineering Volume 20, Issue 4
Show Author Affiliations
C. E. Hurwitz, Massachusetts Institute of Technology (United States)

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