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Optical Engineering

InGaAsP Laser Diodes
Author(s): Gregory H. Olsen
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Paper Abstract

The advantages and properties of InGaAsP laser diodes in the 1.0 to 1 .7 um spectral region are discussed. The structure, growth (both vapor and liquid phase epitaxy), and operating principles of these devices are briefly reviewed. State-of-the-art device results from 1.3 and 1 .55 um devices are then presented. The modal, thermal, and reliability properties of these devices, as well as their commercial availability, are also discussed, and possible directions for future applications are considered.

Paper Details

Date Published: 1 June 1981
PDF: 6 pages
Opt. Eng. 20(3) 203440 doi: 10.1117/12.7972738
Published in: Optical Engineering Volume 20, Issue 3
Show Author Affiliations
Gregory H. Olsen, RCA Laboratories (United States)

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