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Optical Engineering

III-V Heterostructure Devices For Integrated Optics
Author(s): James L. Merz
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Paper Abstract

A review is given of recent progress in the development of integrated optical circuits involving the AlGa1-XAs/GaAs double heterostructure system. Various devices utilizing periodic corrugations or gratings are described briefly, whereas alternate attempts to fabricate optical circuits by wet chemical etching are discussed in more detail. The current trend to explore other III-V compounds is considered, with emphasis on the quaternary system GaxIn1-xPYAs1-y. Lattice matching of this quaternary to InP results in long wavelength emission, suitable for use with present optical fibers. A number of reasons are also given for increased investigation of this quaternary lattice-matched to GaAs.

Paper Details

Date Published: 1 August 1980
PDF: 6 pages
Opt. Eng. 19(4) 194581 doi: 10.1117/12.7972562
Published in: Optical Engineering Volume 19, Issue 4
Show Author Affiliations
James L. Merz, University of California (United States)

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