Share Email Print

Optical Engineering

In Situ Characterization of Positive Resist Development
Author(s): W. G. Oldham
Format Member Price Non-Member Price
PDF $20.00 $25.00

Paper Abstract

The exposure of certain positive photoresists has been shown by Dill and co-workers to be modelable in terms of a local inhibitor concentration which results in a local development rate. The development process is assumed to be a surface etching reaction in which the surface velocity is the local development rate. The characterization of resists for the purpose of line-edge profile simulation therefore involves the measurement of development rate for controlled exposure dose profiles. In this paper a technique is described in which the resist thickness is continuously plotted during development. The low frequency capacitance is measured using a conducting substrate as one plate, and the highly conductive developer as the other plate of the capacitor. The inverse capacitance, proportional to the composite resist-oxide thickness, is obtained using an analog divider. Examples of standing wave effects in Shipley AZ 1350 resists, and resist development rate modification using chlorobenzene are presented.

Paper Details

Date Published: 1 February 1979
PDF: 4 pages
Opt. Eng. 18(1) 180159 doi: 10.1117/12.7972320
Published in: Optical Engineering Volume 18, Issue 1
Show Author Affiliations
W. G. Oldham, University of California (United States)

© SPIE. Terms of Use
Back to Top