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Optical Engineering

Quaternary Alloy Infrared Heterojunction Detectors
Author(s): A. R. Clawson; W. Y. Lum; H. H. Wieder
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Paper Abstract

Single heterojunction photodiodes suitable for the 1.0 to 1.3 pm spectral region of interest for fiber optics communication have been prepared from lattice-matched p-type epilayers of the quaternary III-V alloy semiconductor InGaAsP on n-type InP substrates. The characteristics of these heterojunctions are demonstrated by mesa photodiodes made from Zn-doped epilayers of composition In0.84Ga0.16Aso.34P0.66 on Sn-doped InP. Their room temperature spectral response extends from the ~0.96 um self-filtering cutoff of the InP substrate to (~1.13 um determined by the bandgap of this particular quaternary composition. Responsivities of 0.46 A/W and external quantum efficiencies of 0.54 are measured at 1.05 um.

Paper Details

Date Published: 1 December 1978
PDF: 5 pages
Opt. Eng. 17(6) 176666 doi: 10.1117/12.7972302
Published in: Optical Engineering Volume 17, Issue 6
Show Author Affiliations
A. R. Clawson, Naval Ocean Systems Center (United States)
W. Y. Lum, Naval Ocean Systems Center (United States)
H. H. Wieder, Naval Ocean Systems Center (United States)


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