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Optical Engineering

Infrared Charge Transfer Devices: The Silicon Approach
Author(s): Richard D. Nelson
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Paper Abstract

Possible system applications of Infrared Charge Transfer Devices are reviewed. It is found that this device technology can have a very significant systems impact. Analyses are performed to calculate the quantum efficiency, quantum yield, frequency response, photoconductive gain, operating temperature, noise and the distinction between longitudinal and transverse bias configurations of silicon detectors. Tables of silicon detector properties are included. Approaches to the interface circuitry which couples the detectors and the CTD multiplexer are examined. Examples of existing low background and high background IRCTD detector arrays are given.

Paper Details

Date Published: 1 June 1977
PDF: 9 pages
Opt. Eng. 16(3) 163275 doi: 10.1117/12.7972144
Published in: Optical Engineering Volume 16, Issue 3
Show Author Affiliations
Richard D. Nelson, Rockwell International (United States)


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