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Optical Engineering

Recent Infrared Detector Developments for Future Remote Sensor Applications
Author(s): D. P. Mathur
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Paper Abstract

Molecular beam epitaxy has been applied as a technique for growing low carrier concentration, single crystal thin films of lead-tin-telluride suitable for fabrication of infrared detect-ors in the wavelength region of 3 to 14 um. Lead-tin-tellur-ide photodiode detectors with background-limited performance in the 8 to 14 pm band at 77°K have been fabricated. Twenty-five element linear arrays of lead-tin-telluride detect-ors have been fabricated and flip-chip bonded to an alumina substrate.

Paper Details

Date Published: 1 August 1975
PDF: 6 pages
Opt. Eng. 14(4) 144351 doi: 10.1117/12.7971844
Published in: Optical Engineering Volume 14, Issue 4
Show Author Affiliations
D. P. Mathur, The Perkin-Elmer Corporation (United States)

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