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Optical Engineering

Liquid phase epitaxial growth from Te-rich solutions and junction formation in Hg1-xCdxTe (x=0.22)
Author(s): A. K. Sridhar; S. C. Gupta
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Paper Abstract

Growth of Hg1-xCdxTe mercury cadmium telluride (MCT), by liquid phase epitaxy (LPE) is the most important technology for the fabrication of IR detectors for imaging. We present in detail the LPE growth of MCT from Te-rich solutions using a dipping technique. The physical parameters such as surface morphology, composition, thickness, and the electrical properties of the undoped epilayers are given. Effects of substrate rotation on surface morphology have been studied. The conditions for obtaining good uniform epilayers in 8 to 14 μm are discussed. The LPE layers have been annealed in the Hg atmosphere. The results of Hg diffusion into the p-type layer as a function of annealing temperature are also discussed.

Paper Details

Date Published: 1 April 1993
PDF: 5 pages
Opt. Eng. 32(4) doi: 10.1117/12.61288
Published in: Optical Engineering Volume 32, Issue 4
Show Author Affiliations
A. K. Sridhar, Solid State Physics Lab. (India)
S. C. Gupta, Uptron India Ltd. (India)


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