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Optical Engineering

Enhanced optical effect in a high electron mobility transistor device
Author(s): B. B. Pal; H. Mitra
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Paper Abstract

When radiation is allowed to fall on the spacing between the source and gate and the gate and drain of a AlGaAs/GaAs high electron mobility transfer device, a photovoltage develops across the heterojunction. This significantly enhances the device characteristics.

Paper Details

Date Published: 1 April 1993
PDF: 5 pages
Opt. Eng. 32(4) doi: 10.1117/12.61285
Published in: Optical Engineering Volume 32, Issue 4
Show Author Affiliations
B. B. Pal, Banaras Hindu Univ. (India)
H. Mitra, Banaras Hindu Univ. (India)


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