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Optical Engineering

Electrical properties of p-type HgCdTe/ZnS interfaces
Author(s): Henry X. Yuan; Fei Ming Tong; Dingyuan Tang
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Paper Abstract

A study is made of p-type HgCdTe surface passivation with ZnS. Measurements of capacitance-voltage characteristics for metal insulator semiconductor (MIS) devices show that the interface electrical properties strongly depend on the surface preparation. Under some appropriate surface pretreatment, the fixed interface charge density can be lowered to near -1 x 1011 cm-2, and the slow trap density can be less than 1 x 1011 cm-2, but the interface trap density is still as high as 1012 cm-2 eV-1. Experimental results are discussed.

Paper Details

Date Published: 1 March 1993
PDF: 5 pages
Opt. Eng. 32(3) doi: 10.1117/12.61042
Published in: Optical Engineering Volume 32, Issue 3
Show Author Affiliations
Henry X. Yuan, Shanghai Institute of Technical Physics (China)
Fei Ming Tong, New Jersey Institute of Technology (United States)
Dingyuan Tang, Shanghai Institute of Technical Physics (China)


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