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Optical Engineering

Metal-oxide thin films with reduced residual absorption deposited in a reactive low-voltage ion-plating process with N2 activation
Author(s): Sohrab Zarrabian; Austin Grogan; X. Q. Hu; C. Lee; Karl H. Guenther
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Paper Abstract

Mechanisms have been investigated for increasing the abundance of atomic oxygen in the process environment during reactive low-voltage ion plating, a plasma-assisted evaporation process. Feeding several percent of nitrogen into the coating chamber led to enhanced oxidation and consequential reduction of residual optical absorption of ion-plated oxide films of tantala.

Paper Details

Date Published: 1 March 1993
PDF: 7 pages
Opt. Eng. 32(3) doi: 10.1117/12.60847
Published in: Optical Engineering Volume 32, Issue 3
Show Author Affiliations
Sohrab Zarrabian, Univ. of Central Florida (United States)
Austin Grogan, University of Central Florida (United States)
X. Q. Hu, Univ. of Central Florida (United States)
C. Lee, Univ. of Central Florida (United States)
Karl H. Guenther, Univ. of Central Florida (United States)

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