Share Email Print

Optical Engineering

Molecular beam epitaxy engineered III-V semiconductor structures for low-power optically addressed spatial light modulators
Author(s): Anders G. Larsson; Joseph L. Maserjian
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Device approaches are investigated for optically addressed SLMs based on molecular beam epitaxy (MBE) engineered III-V materials and structures. Strong photo-optic effects can be achieved in periodically δ-doped multiple quantum well structures, but are still insufficientfor high-contrast modulation with only single- or double-pass absorption through active layers of practical thickness. We use the asymmetric Fabry-Perot cavity approach that permits extinction of light due to interference of light reflected from the front and back surfaces of the cavity. Optically controlled modulation of the absorption in the active cavity layers unbalances the cavity and "turns on" the reflected output signal, thereby allowing large contrast ratios. This approach is realized with an all-MBE-grown structure consisting of GaAs/AlAs quarter-wave stack reflector grown over the GaAs substrate as the high reflectance mirror (≈ 0.98) and the GaAs surface as the low reflectance mirror (≈ 0.3). We use for our active cavity InGaAs/GaAs multiple quantum wells separated by periodically δ-doped GaAs barriers to achieve a sensitive photo-optic effect due to exciton quenching. High-contrast modulation (> 60:1) is achieved using a low-power (< 100 mW/cm2) InGaAs/GaAs quantum well laser for the control signal.

Paper Details

Date Published: 1 July 1992
PDF: 7 pages
Opt. Eng. 31(7) doi: 10.1117/12.57683
Published in: Optical Engineering Volume 31, Issue 7
Show Author Affiliations
Anders G. Larsson, Jet Propulsion Lab. (United States)
Joseph L. Maserjian, Jet Propulsion Lab. (United States)

© SPIE. Terms of Use
Back to Top