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Optical Engineering

Optical sensors
Author(s): Vladimir T. Khryapov; Vladimir P. Ponomarenko; V. G. Butkevitch; Igor I. Taubkin; Vitaly I. Stafeev; Sergey A. Popov; Vladimir V. Osipov
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Paper Abstract

Experimental and theoretical results are presented of photosensitive semiconductor structures as well as the main developments of modern semiconductor photoresistors, photodiodes, including injection ones, based on polycrystalline and monocrystalline materials, multilayer structures and superlattices for the visual-far infrared spectral range. Performance of multielement photodetectors based on lead chalcogenides, germanium and silicon, AIIIBV compounds, and CMT structures is described.

Paper Details

Date Published: 1 April 1992
PDF: 7 pages
Opt. Eng. 31(4) doi: 10.1117/12.56113
Published in: Optical Engineering Volume 31, Issue 4
Show Author Affiliations
Vladimir T. Khryapov, Orion (Russia)
Vladimir P. Ponomarenko, Orion (Russia)
V. G. Butkevitch, Orion (Russia)
Igor I. Taubkin, Orion (Russia)
Vitaly I. Stafeev, Orion (Russia)
Sergey A. Popov, Orion (Russia)
Vladimir V. Osipov, Institute of Electrophysics (Russia)

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