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Optical Engineering

Infrared image sensors
Author(s): Paul R. Norton
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Paper Abstract

Second-generation infrared image sensors are becoming available in a variety of infrared detector materials, including photovoltaic HgCdTe, PtSi, and lnSb and photoconductive extrinsic silicon, PbS, and PbSe. We review the background of the evolution of infrared detector materials and summarize the formats and configurations available now in prototype production. Capsule data summaries are provided to assist the reader in understanding the operating range of spectral response, temperature, and other performance parameters such as uniformity for each detector material type.

Paper Details

Date Published: 1 November 1991
PDF: 15 pages
Opt. Eng. 30(11) doi: 10.1117/12.56001
Published in: Optical Engineering Volume 30, Issue 11
Show Author Affiliations
Paul R. Norton, Virginia Polytechnic Institute and State Univ. (United States)


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