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Optical Engineering

Single-beam and multiple-beam optical limiters using semiconductors
Author(s): Thomas F. Boggess; Arthur L. Smirl; Jimmy Dubard; A. G. Cui; Rod Skinner
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Paper Abstract

We report our investigations of single- and multiple-beam optical limiter configurations using GaAs and Si as the nonlinear optical materials. Three distinct multiple-beam geometries are discussed. One of these, in which two beams interfere within the semiconductor to produce a grating, takes advantage oftransient energy transfer and photorefractive beam coupling to deplete the signal beam. The other two configurations exploit the whole-beam absorptive and refractive index changes induced in the semiconductor by a strong control beam that arrives at the sample before the signal. For one of the latter two configurations, nonlinear absorption and induced defocusing are used to attenuate the signal; in the other, nonlinear absorption and induced deflection are used. We discuss the relative merits of each configuration and compare them to singlebeam results obtained under identical experimental conditions.

Paper Details

Date Published: 1 May 1991
PDF: 7 pages
Opt. Eng. 30(5) doi: 10.1117/12.55847
Published in: Optical Engineering Volume 30, Issue 5
Show Author Affiliations
Thomas F. Boggess, Univ. of Iowa (United States)
Arthur L. Smirl, Univ. of Iowa (United States)
Jimmy Dubard, Univ. of Iowa (United States)
A. G. Cui, Univ. of Iowa (United States)
Rod Skinner

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