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Optical Engineering

Evaluation of a PtSi infrared camera
Author(s): James E. Murguia; Jonathan Martin Mooney; William S. Ewing
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Paper Abstract

A 160x244 element PtSi IRCCD imaging array is characterized using a conventional approach commonly reported for visible imagers, introducing, as needed, issues specific to the IR. Mean-variance data are used to extract two CCD charge transfer efficiencies; one efficiency corresponds to the charge partitioning in a transfer (0.9987), and the other efficiency corresponds to the charge lost to charge pumping in a transfer (0.9994). The array is shown to be background limited for pixels near the output node. A 2-point correction is shown to substantially reduce fixed pattern noise of linear PtSi photodetectors at backgrounds offset from the points of correction, but it can introduce additional noise at the point of compensation if adequate precision is not used when calculating the 2nd-point coefficients. The measured D* (detectivity) and NE?T (noise equivalent temperature difference) are 6.5x1010 cm. ?Hz W-1 and 0.1°C, respectively. The horizontal and vertical MRT (minimum resolvable temperature) of the array is measured to be 0.02°C at a spatial frequency of 1//6 cycle/mrad. Pixel 1/f noise was below shot noise to 2x 10_5 Hz.

Paper Details

Date Published: 1 July 1990
PDF: 9 pages
Opt. Eng. 29(7) doi: 10.1117/12.55653
Published in: Optical Engineering Volume 29, Issue 7
Show Author Affiliations
James E. Murguia, U.S. Air Force (United States)
Jonathan Martin Mooney, Rome Lab. (United States)
William S. Ewing, Texas Instruments Inc. (United States)


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