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Optical Engineering

Noise characterization of GaAs MESFETs for the design of optical amplifiers
Author(s): Anna Gina Perri; Mario Nicola Armenise; Francesco Corsi
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Paper Abstract

The principal noise sources of GaAs MESFETs are taken into account in order to completely characterize the equivalent circuit model that has been utilized in the design of a low-noise small-signal amplifier for optical receivers. The total input noise current of the amplifier, due to correlated gate and drain MESFET noise, has been estimated for evaluating the excess channel noise factor Γ for different values of the photodiode capacitance. A method is demonstrated for easy identification of the matching network parameters and photodiode capacitance that mmimize the noise. Finally, the minimum noise gain, gain-frequency dependence, input and output voltage standing wave ratios, noise figure, and bandwidth of the amplifier are evaluated in the 8 to 12 GHz frequency range. A gain of 22.1±1 dB and a noise figure less than 3 dB in a bandwidth larger than 4 GHz are obtained.

Paper Details

Date Published: 1 April 1990
PDF: 6 pages
Opt. Eng. 29(4) doi: 10.1117/12.55597
Published in: Optical Engineering Volume 29, Issue 4
Show Author Affiliations
Anna Gina Perri, Univ. degli Studi di Bari (Italy)
Mario Nicola Armenise, Politecnico di Bari (Italy)
Francesco Corsi, Univ. degli Studi di Bari (Italy)


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