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Optical Engineering

Surface-emitting microlasers for photonic switching and interchip connections
Author(s): Jack L. Jewell; Yong H. Lee; Axel Scherer; Samuel L. McCall; N. Anders Olsson; James P. Harbison; Leigh T. Florez
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Paper Abstract

Vertical-cavity electrically pumped surface-emitting microlasers are formed on GaAs substrates at densities greater than two million per square centimeter. Two wafers were grown with In0.2Ga0.8As active material composing three 80 Å thick quantum wells in one and a single quantum well (SQW) 100 Å thick in the other. Lasing was seen in devices as small as 1.5 μm diameter with <0.05 μm3 active material. SQW microlasers 5 × 5 μm square had room-temperature cw current thresholds as low as 1.5 mA with 983 nm output wavelength. 10 × 10 μm square SQW microlasers were modulated by a pseudorandom bit generator at 1 Gb/s with less than 10-10 bit error rate. Pulsed output >170 mW was obtained from a 100 μm square device. The laser output passes through the nominally transparent substrate and out its back side, a configuration well suited for micro-optic integration and photonic switching and interchip connections.

Paper Details

Date Published: 1 March 1990
PDF: 5 pages
Opt. Eng. 29(3) doi: 10.1117/12.55593
Published in: Optical Engineering Volume 29, Issue 3
Show Author Affiliations
Jack L. Jewell, Photonics Research, Inc. (United States)
Yong H. Lee, AT&T Bell Labs. (United States)
Axel Scherer, Bell Communications Research (United States)
Samuel L. McCall, AT&T Bell Labs. (United States)
N. Anders Olsson, AT&T Bell Labs. (United States)
James P. Harbison, Bell Communications Research (United States)
Leigh T. Florez, Bell Communications Research (United States)

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