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Optical Engineering

Scanning spot metrology for testing of photolithographic masks
Author(s): Peter Blattner; Hans Peter Herzig; S. Sohail H. Naqvi
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Paper Abstract

We investigated an optical method for characterizing submicrometer structures of photolithographic masks, enabling fast and nondestructive testing over large areas. The scanning spot metrology provides accurate information about edge locations of opaque structures on chrome masks. Algorithms for the extraction of edge locations from the detector signal are discussed and applied to the characterization of a modulated grating mask. Local fabrication errors of the order of 10 to 50 nm can be detected.

Paper Details

Date Published: 1 August 1995
PDF: 3 pages
Opt. Eng. 34(8) doi: 10.1117/12.205667
Published in: Optical Engineering Volume 34, Issue 8
Show Author Affiliations
Peter Blattner, Univ. of Neuchatel (Switzerland)
Hans Peter Herzig, Univ. of Neuchatel (Switzerland)
S. Sohail H. Naqvi, Univ. of New Mexico (Pakistan)


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