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Optical Engineering

Chemical beam epitaxy of 1.55-μm separate confinement heterostructure multiple quantum well laser diodes
Author(s): Jean-Francois Carlin; Jean-Michel Sallese; Marc P. de Fays; Patrick Grunberg; Alok P. Rudra; Jean-Marc Bonard; Marc Ilegems; Jean-Daniel Ganiere
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Paper Abstract

We report on the realization of InGaAs-InGaAsP separate confinement heterostructure multiple quantum well lasers grown by chemical beam epitaxy. We discuss key growth parameters and characterization by secondary-ion mass spectroscopy, transmission electron microscopy, electron-beam-induced current, and x-ray diffraction. Threshold current densities as low as 450 Acm2 are obtained on lasers with five strained InGaAs quantum wells, along with internal quantum efficiencies of 90% and optical losses of 5 cm-1.

Paper Details

Date Published: 1 July 1995
PDF: 7 pages
Opt. Eng. 34(7) doi: 10.1117/12.204694
Published in: Optical Engineering Volume 34, Issue 7
Show Author Affiliations
Jean-Francois Carlin, Thomson CSF DSI (Switzerland)
Jean-Michel Sallese, Ecole Polytechnique Federale de Lausanne (Switzerland)
Marc P. de Fays, Ecole Polytechnique Federale de Lausanne (Switzerland)
Patrick Grunberg, Ecole Polytechnique Federale de Lausanne (Switzerland)
Alok P. Rudra, Ecole Polytechnique Federale (Switzerland)
Jean-Marc Bonard, Ecole Polytechnique Federale de Lausanne (Switzerland)
Marc Ilegems, Ecole Polytechnique Federale de Lausanne (Switzerland)
Jean-Daniel Ganiere, Ecole Polytechnique Federale de Lausanne (Switzerland)


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