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Optical Engineering

Engineering the exciton linewidth in II-VI quantum well structures
Author(s): John P. Doran; Fred P. Logue; T. Miyajima; Ross P. Stanley; John F. Donegan; John Hegarty
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Paper Abstract

The excitonic transition in II-VI quantum well materials has recently been used as the basis for optical modulators and also as the lasing transition at low temperatures. The central aspect in the use of the exciton resonance in optical devices is the understanding of the exciton linewidth. We present a detailed study of the interactions that affect the linewidth in II-VI semiconductor quantum well materials. The broadening of the resonance with increasing temperature can be controlled by altering the material parameters of the II-VI structures. In so doing the exciton binding energy can exceed the LO-phonon energy and thereby reduce the homogeneous contribution to the measured linewidth. Efforts to reduce well-width fluctuations in the growth of the II-VI quantum well structures, which are responsible for the inhomogeneous linewidth, must also be made to a limit where the room temperature Iinewidth is narrow and homogeneously broadened.

Paper Details

Date Published: 1 December 1994
PDF: 5 pages
Opt. Eng. 33(12) doi: 10.1117/12.186842
Published in: Optical Engineering Volume 33, Issue 12
Show Author Affiliations
John P. Doran, Trinity College (Ireland)
Fred P. Logue, Trinity College (Ireland)
T. Miyajima, Sony Corporate Research Ctr. (Japan)
Ross P. Stanley, IMO Electro-Optical Systems (Switzerland)
John F. Donegan, Trinity College (Ireland)
John Hegarty, Univ. of Dublin (Ireland)


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