Share Email Print

Optical Engineering

Liquid-crystal 1.8-in. displays using poly-Si thin-film transistors with novel structure and a storage-capacitance arrangement
Author(s): Takashi Sugawara; Kazuhiro Kobayashi; Hiroyuki Murai; Christiaan Baert; Takao Sakamoto; Hidetada Tokioka; Yuichi Masutani; Hirofumi Namizaki; Masahiro Nunoshita
Format Member Price Non-Member Price
PDF $20.00 $25.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have fabricated 1.8-in., 86,400-pixel poly-Si thin-film-transistor (TFT) LCDs with a novel TFT structure and a storage-capacitance (Cst) arrangement. The TFTs have a self-aligned offset structure that is made by a simple process without using an additional mask. With this structure, we have reduced the OFF current, and hence attained a high ON/OFF current ratio of 107. A novel Cst line arrangement called "modified on Cst gate" was adopted. Gate lines and Cst lines are arranged alternately, and the (n - 1)'th Cst line is connected to the n'th gate line at the line's end. The Cst line works as backup for the gate line. Consequently, we have obtained TFT arrays with no line defects (240 gate lines). By using these techniques, we have succeeded in fabricating a high-performance 1.8-in. poly-Si TFT-LCD panel for a projection TV.

Paper Details

Date Published: 1 November 1994
PDF: 7 pages
Opt. Eng. 33(11) doi: 10.1117/12.181150
Published in: Optical Engineering Volume 33, Issue 11
Show Author Affiliations
Takashi Sugawara, Advanced Display, Inc. (Japan)
Kazuhiro Kobayashi, Mitsubishi Electric Corp. (Japan)
Hiroyuki Murai, Advanced Display Inc. (Japan)
Christiaan Baert, I.M.E.C. (Belgium)
Takao Sakamoto, Mitsubishi Electric Corp. (Japan)
Hidetada Tokioka, Mitsubishi Electric Corp. (Japan)
Yuichi Masutani, Mitsubishi Electric Corp. (Japan)
Hirofumi Namizaki, Mitsubishi Electric Corp. (Japan)
Masahiro Nunoshita, Mitsubishi Electric Corp. (Japan)

© SPIE. Terms of Use
Back to Top