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Optical Engineering

Photodetection enhancement in two-terminal amorphous silicon-based devices: an experimental and computer simulation study
Author(s): Stephen J. Fonash; Jingya Hou; Francisco A. Rubinelli; Murray Bennett; Scott Wiedeman; Liyou Yang; James Newton
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Paper Abstract

Although amorphous silicon (a-Si:H) is very photosensitive and can be doped n and p type, it does not give effective phototransistors because of the extremely poor diffusion lengths. Hence enhanced photodetection in two-terminal a-Si:H devices is of considerable interest. Using the Analysis of Microelectronic and Photonic Structures (AMPS) computer model, we explore enhanced photodetection possibilities in two-terminal a-Si:H structures and show situations where it can occur. These situations, which we then experimentally verify, are of two types: one can yield quantum efficiencies greater than unity and the other can yield gains of 103. Both of these enhanced photodetection situations occur because of what we term photogating.

Paper Details

Date Published: 1 June 1994
PDF: 5 pages
Opt. Eng. 33(6) doi: 10.1117/12.169735
Published in: Optical Engineering Volume 33, Issue 6
Show Author Affiliations
Stephen J. Fonash, The Pennsylvania State Univ. (United States)
Jingya Hou, The Pennsylvania State Univ. (United States)
Francisco A. Rubinelli, The Pennsylvania State Univ. (United States)
Murray Bennett, Solarex Corp. (United States)
Scott Wiedeman, Solarex Corp. (United States)
Liyou Yang, Solarex Corp. (United States)
James Newton, Solarex Corp. (United States)


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