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Optical Engineering

Mechanisms of dark conductivity and photosensitivity in PbSe polycrystalline films on glass and Si substrates
Author(s): Vladimir V. Tetyorkin; V. B. Orletskii; Fiodor F. Sizov; N. O. Tashtanbajev; Alexandr G. Stepanushkin
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Paper Abstract

Temperature dependencies of dark electrical characteristics (Hall effect and conductivity) are investigated in PbSe polycrystalline films with different crystallite sizes deposited on glass and Si substrates. In these films the spectral dependencies of photoelectrical characteristics and the lifetime of photoexcited carriers on the crystallite sizes are studied. It is shown that the experimental data may be explained by the existence of the potential barriers for the majority carriers (holes) at the grain boundaries. The height of the barriers is found to depend on the crystallite sizes. PbSe photosensitive structures with detectivity D*λ = 2 x 1010 cm Hz½/W at room temperatures are fabricated on glass substrates. On Si substrates, the detectivity values of PbSe polycrystalline photodetectors were an order lower.

Paper Details

Date Published: 1 May 1994
PDF: 4 pages
Opt. Eng. 33(5) doi: 10.1117/12.167103
Published in: Optical Engineering Volume 33, Issue 5
Show Author Affiliations
Vladimir V. Tetyorkin, Institute for Physics of Semiconductors (Ukraine)
V. B. Orletskii, Institute for Semiconductor Physics (Ukraine)
Fiodor F. Sizov, Institute for Physics of Semiconductor (Ukraine)
N. O. Tashtanbajev, Institute for Physics of Semiconductors (Ukraine)
Alexandr G. Stepanushkin, Institute for Physics of Semiconductors (Ukraine)


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