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Optical Engineering

New trends in semiconductor infrared detectors
Author(s): Antoni Rogalski
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Paper Abstract

Recent efforts in semiconductor IR detector research have been directed toward improving the performance of single-element devices,large electronically scanned arrays, and higher operating temperature. Another important aim is to make IR detectors cheaper and more convenient to use. New trends in semiconductor IR detector technologies are discussed, including HgCdTe photodiodes, Schottky-barrier photoemissive devices, alternatives to HgCdTe ternary alloys, monolithic lead-chalcogenide photodiodes, GaAs/AlGaAs intersubband quantum well photoconductors, and ways to improve the performance of nearroom-temperature detectors. A comparison of different types of detectors with the present stage of HgCdTe technology achievements is undertaken.

Paper Details

Date Published: 1 May 1994
PDF: 18 pages
Opt. Eng. 33(5) doi: 10.1117/12.165821
Published in: Optical Engineering Volume 33, Issue 5
Show Author Affiliations
Antoni Rogalski, Military Academy of Technology (Poland)

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