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Optical Engineering

Thermoelectrically cooled arsenic diffused medium-wavelength infrared HgCdTe photodiodes
Author(s): Robert Ciupa; Antoni Rogalski; Jolanta Rutkowska; Jozef Piotrowski
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Paper Abstract

The performance of thermoelectrically cooled p+ -n medium-wavelength infrared (MWIR) HgCdTe photodiodes is analyzed. The effect of doping profile on the photodiode parameters (R0A product, quantum efficiency) is solved by forward-condition steady-state analysis. Results of calculations are compared with experimental data. The p+ -n homojunctions are formed by arsenic diffusion in HgCdTe epilayers. MWIR photodiodes effectively operate at elevated temperatures around 200 K and exhibit background-limited photodetection (BLIP) performance when monolithic optical immersion is used.

Paper Details

Date Published: 1 May 1994
PDF: 6 pages
Opt. Eng. 33(5) doi: 10.1117/12.165820
Published in: Optical Engineering Volume 33, Issue 5
Show Author Affiliations
Robert Ciupa, Institute of Technical Physics, WAT (Poland)
Antoni Rogalski, Military Academy of Technology (Poland)
Jolanta Rutkowska, Institute of Technical Physics WAT (Poland)
Jozef Piotrowski, Vigo System (Poland)

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