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Optical Engineering

Molecular beam epitaxy HgCdTe infrared photovoltaic detectors
Author(s): Jose M. Arias; John G. Pasko; Majid Zandian; Lester J. Kozlowski; Roger E. DeWames
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Paper Abstract

We present p-on-n heterostructure HgCdTe photovoltaic device data that illustrate the high performance and flexibility in band-gap control of molecular beam epitaxy technology. This flexibility demonstration was performed by growing material for operation in the following cutoff wavelength (λco) ranges of interest: long wavelength IR (LWIR) [λco(77 K) = 9 to 11 μm], mid-long wavelength IR (MLWIR) [λco(77 K) = 6.8 μm], and very long wavelength IR (VLWIR) [λco(40 K)=20 μm]. Detailed analyses of the current-voltage characteristics of these diodes as a function of temperature show that their dark currents are diffusion limited down to 80, 50, and 30 K for the MLWIR, LWIR, and VLWIR photodiodes, respectively. In general, the R0A device values were uniform for the three band-gap ranges when operating under diffusionlimited conditions. We confirmed this by fabricating a 64 x 64 LWIR (λco = 10.2 μm) hybrid FPA with detectivity (D*) operability greater than 97% when operating at 77 K. The mean D* value for this device was 1.4 x 1011 cm Hz1/2/W and it was background limited at the tested flux of 2.18 x 1016 photons/cm2 s. This device was tested at higher temperatures of operation without changing background conditions, and it remained background limited up to 100 K.

Paper Details

Date Published: 1 May 1994
PDF: 7 pages
Opt. Eng. 33(5) doi: 10.1117/12.165818
Published in: Optical Engineering Volume 33, Issue 5
Show Author Affiliations
Jose M. Arias, Rockwell International Corp. (United States)
John G. Pasko, Rockwell International Science Ctr. (United States)
Majid Zandian, Rockwell International Science Ctr. (United States)
Lester J. Kozlowski, Rockwell International Corp. (United States)
Roger E. DeWames, Rockwell International Corp. (United States)


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